Plasma confinement rings including RF absorbing material for reducing polymer deposition

ABSTRACT

Plasma confinement rings are adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to substantially reduce polymer deposition on those surfaces. The plasma confinement rings include an RF lossy material effective to enhance heating at portions of the rings. A low-emissivity material can be provided on a portion of the plasma confinement ring assembly to enhance heating effects.

BACKGROUND

Plasma processing chambers can include an upper electrode and a lowerelectrode. The upper electrode typically faces a substrate supportadapted to support a semiconductor substrate during plasma processing.During the plasma processing, power is supplied to one or bothelectrodes to activate the process gas and produce the plasma to processthe substrate.

Plasma etching can be performed in plasma processing chambers to etchselected materials provided as layers on a semiconductor substrate. Theprocessing conditions are chosen so that the plasma etches desiredfeatures in the layers.

SUMMARY

An embodiment of a plasma confinement ring for a plasma confinement ringassembly for a plasma processing chamber comprises a surface and an RFlossy material. The RF lossy material is effective to couple RF energysuch that the surface reaches a sufficiently high temperature tosubstantially reduce polymer deposition on the surface when the plasmaconfinement ring is exposed to plasma in the plasma processing chamber.

An embodiment of a plasma confinement ring assembly for a plasmaprocessing chamber comprises at least two plasma confinement ringsarranged in a stack. Each of the plasma confinement rings comprises aplasma-exposed surface and an RF lossy material. When the plasmaconfinement rings are exposed to plasma in the plasma processingchamber, the RF lossy material is effective to couple RF energy suchthat the plasma-exposed surface of each plasma confinement ring reachesa sufficiently high temperature to substantially reduce polymerdeposition on the plasma-exposed surface.

Another embodiment of a plasma confinement ring assembly for a plasmaprocessing chamber comprises at least two plasma confinement ringsarranged in a stack. Each of the plasma confinement rings comprises aplasma-exposed surface of an RF lossy material. When the plasmaconfinement rings are exposed to plasma in the plasma processingchamber, the RF lossy material is effective to couple RF energy suchthat the plasma-exposed surface of each plasma confinement ring reachesa sufficiently high temperature to substantially reduce polymerdeposition on the plasma-exposed surface.

A further embodiment of a plasma confinement ring assembly for a plasmaprocessing chamber comprises at least two plasma confinement ringsarranged in a stack. Each of the plasma confinement rings comprises aplasma-exposed surface and an embedded RF lossy material which is notexposed to plasma. When the plasma confinement rings are exposed toplasma in the plasma processing chamber, the RF lossy material iseffective to couple RF energy such that the plasma-exposed surface ofeach plasma confinement ring reaches a sufficiently high temperature tosubstantially reduce polymer deposition on the plasma-exposed surface.

Another embodiment of a plasma confinement ring assembly for a plasmaprocessing chamber comprises a mounting ring including an inner ringadapted to be supported on an outer ring. The inner ring includes aplasma-exposed inner surface, an outer surface opposite to the innersurface, and a coating of an electrically-conductive, low-emissivitymaterial on the outer surface. At least two plasma confinement rings areadapted to be arranged in a stack and suspended from the mounting ring.

An embodiment of a method of processing a semiconductor substrate in aplasma processing chamber comprises supplying process gas into a plasmaprocessing chamber comprising at least two plasma confinement ringsarranged in a stack, where each of the plasma confinement ringscomprises a plasma-exposed surface and an RF lossy material; andproducing a plasma from the process gas and etching a semiconductorsubstrate in the plasma processing chamber. During the etching, the RFlossy material couples RF energy such that the plasma-exposed surface ofeach plasma confinement ring reaches a sufficiently high temperature tosubstantially reduce polymer deposition on the plasma-exposed surface.

BRIEF DESCRIPTION OF THE DRAWING FIGURES

FIG. 1 illustrates a portion of an embodiment of a plasma confinementring assembly.

FIG. 2 is a side view of another embodiment of a plasma confinement ringhaving a two-piece construction.

FIG. 3A is a top view of another embodiment of a plasma confinement ringcomprising embedded RF lossy material.

FIG. 3B is a cross-sectional view of the plasma confinement ring shownin FIG. 3A taken along line 3B-3B.

FIG. 4A illustrates another embodiment of a plasma confinement ringcomprising a two-piece mounting ring.

FIG. 4B is an enlarged partial view of the outer ring of the mountingring shown in FIG. 4A, with a support element removed from a depressionin the outer ring.

FIG. 4C illustrates the outer ring of the mounting ring shown in FIG.4B, with the support element received in the depression in the outerring.

FIG. 5 illustrates a plasma processing chamber including an embodimentof the plasma confinement ring assembly.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

Parallel-plate plasma processing chambers, such as capacitively-coupledchambers, include an upper electrode, such as a showerhead electrode,and a lower electrode. The upper electrode typically faces asemiconductor substrate to be processed. During the plasma processing,power is supplied to one or both electrodes to activate the process gasand produce the plasma to process the substrate.

Interior surfaces of such plasma processing chambers can be poweredsurfaces (e.g., “RF hot surfaces”), grounded surfaces, or floatingsurfaces (comprised of insulating materials). Different energy issupplied to, or impinges on, these different types of surfaces duringplasma processing. The heating characteristics of a chamber part in aparallel-plate plasma processing chamber depends upon the ion energy andthe ion flux supplied to the part's exposed surfaces, and also on theinfrared (IR) energy absorption characteristics of the part. Grounded(return path) surfaces and powered surfaces receive significant ionenergy from plasma. As a result, these surfaces tend to be heated morethan floating parts or surfaces, and also to reach significantlydifferent temperatures.

Highly-polymerizing process gas chemistries, such as process gasescontaining fluorocarbons, hydrofluorocarbons, or precursors of suchgases, can be used to etch dielectric materials, such as silicon oxide.During such plasma etch processes, polymer can deposit on internalsurfaces of the plasma processing chamber. The polymer deposits areundesirable because they can flake off of the surfaces and contaminateprocessed substrates (e.g., processed wafers), as well as contaminatethe chamber. However, as device features continue to shrink, it becomesincreasingly desirable to maintain substrates and plasma-exposed chambersurfaces clean from wafer-to-wafer to achieve repeatable processresults. Accordingly, it is desirable to reduce, and preferably toprevent, the formation of polymer etch deposits on internal surfaces ofchamber parts.

During plasma processing operations, heat can be transferred from and/orto parts and other chamber surfaces by thermal conduction (when the partis in physical contact with another surface), radiation (whenelectromagnetic waves carry heat to and/or from the part) and convection(when heat is carried by a moving fluid in the chamber). Convective heatlosses from parts increase with increasing chamber pressure. Thetemperature increase, ΔT, of a plasma-exposed part or surface duringplasma processing depends on the amount of heat, Q, added to the part orsurface, and the mass, m, and the specific heat, c, of the part;according to the following relationship: Q=mcΔT. Accordingly, for agiven amount of heat added to a part, increasing the part mass decreasesthe increase in temperature of the part. Consequently, a part havinghigh mass (or high heat capacity) may not reach a sufficiently hightemperature during plasma processing to avoid polymer deposition onplasma exposed surfaces of the part.

Generally, polymer deposits are more likely to form on coolerplasma-exposed surfaces of the plasma processing chamber during plasmaprocessing operations. Floating surfaces tend to be cooler surfaces,making them generally more prone to develop polymer buildup as comparedto powered surfaces or grounded surfaces.

The problem of polymer deposition on plasma-exposed surfaces of someparts in plasma processing chambers can be addressed by actively heatingthe part(s). For example, chamber walls can be heated to keep theirplasma-exposed interior surface(s) at a sufficiently high temperature toavoid polymer deposition on the surface(s). Active temperature controlof showerhead electrode assemblies and electrostatic chucks can also beused. However, because such surfaces are powered or grounded andconsequently are subject to high ion energy, polymer is less likely todeposit on these surfaces than on floating surfaces even without activeheating of the powered or grounded surfaces.

Alternatively, the polymer deposition problem can be addressed byremoving as-formed polymer deposits from chamber surfaces. For example,polymer deposits can be removed using aggressive plasma chemistries.Alternatively, the plasma chamber can be wet cleaned to remove polymerdeposits from chamber surfaces. However, such cleaning techniques reduceprocess throughput.

In order to achieve desirable process efficiency and etch uniformity,plasma can be confined within a plasma confinement zone defined betweenthe upper and lower electrodes of a parallel-plate plasma processingchamber. Plasma confinement ring assemblies can be used to provide suchplasma confinement. Exemplary plasma confinement ring assemblies aredisclosed in commonly-owned U.S. Pat. Nos. 5,534,751; 5,998,932;6,019,060; 6,178,919 and 6,527,911, each of which is incorporated hereinby reference in its entirety. As described in U.S. Pat. No. 5,534,751, aplasma confinement ring assembly can include a plurality of plasmaconfinement rings. The rings are arranged in a stack to define aplurality of gas passages extending radially between adjacent rings froman inner surface to an outer surface. Charged particles in the plasmaare neutralized as the particles pass through the passages, therebyminimizing the tendency for a discharge outside the plasma confinementzone (i.e., “unconfinement” of the plasma).

As also described in U.S. Pat. No. 5,534,751, plasma confinement ringassemblies may confine polymer deposition during plasma etch processesto only the plasma confinement rings themselves. However, it isdesirable to substantially reduce, and preferably to prevent, suchpolymer deposition on the confinement rings in order to substantiallyreduce, and preferably prevent, chamber and substrate contaminationproblems, as well as to avoid additional chamber cleaning stepsperformed to remove as-formed polymer deposits from the plasmaconfinement rings.

In light of the above-described polymer deposition problem, it has beendetermined that plasma confinement rings can be provided that areadapted to reach sufficiently high temperatures on plasma-exposedsurfaces of the rings to substantially reduce, and to preferablyprevent, polymer deposition on those surfaces, without actively heatingthe surfaces. More particularly, the plasma confinement rings canlocalize heating at selected portions of the rings that includeplasma-exposed surfaces. Heating is localized by an RF lossy material.

As used herein, an “RF lossy material” is an electrically conductivematerial that can absorb RF energy, i.e., a material that is nottransparent to RF radiation. Accordingly, the RF lossy material cancouple RF energy. Consequently, the RF lossy material is heated.Exemplary RF lossy materials that can be used in the plasma confinementrings include, but are not limited to, doped Si (i.e., silicon that hasbeen doped with a suitable type and amount of dopant to control itselectrical resistivity) and SiC. In addition, the RF lossy material canbe a metallic material, including metals, metal alloys and magneticmaterials, for some embodiments of the plasma confinement rings.

The RF lossy material has a skin depth. The “skin depth” is commonlydefined as the depth below the surface of a conductor at which thecurrent is 1/e (0.37) times the current at the surface. The skin depth,d, is given by the following equation: d=(2ρ/ωμ)^(1/2), where ρ is thematerial electrical resistivity, ω is the angular frequency of current(i.e., ω=2πf, where f is frequency), and μ is the absolute magneticpermeability of the material. According to this equation, the skin depthincreases as the electrical resistivity of the RF lossy materialincreases. For example, it has been reported that the electricalresistivity of SiC can vary from about 10² μΩ-cm to about 10⁵ μΩ-cm.Accordingly, over this electrical resistivity range and at an RFfrequency of 13.56 MHz, the skin depth of SiC can range from about 150μm to about 5000 μm.

In addition to being electrically conductive, the RF lossy materialpreferably has a sufficient volume (i.e., thermal mass) so that it canabsorb sufficient RF energy during the period that plasma is produced inthe plasma processing chamber, so that the RF lossy material reaches asufficiently high temperature to substantially reduce, and to preferablyprevent, polymer deposition on the RF lossy material. In an embodiment,the RF lossy material can have a suitable thickness to couple with RFenergy and provide a sufficient thermal mass. For example, the thicknessof the RF lossy material that is used can range from about the skindepth to about three times the skin depth of the RF lossy material forthe RF frequency that is incident on the RF lossy material in the plasmaprocessing chamber. For use in plasma processing chambers that includemore than one RF source that can supply RF power at more than frequency,the thickness of the RF material can be selected based on the lowestfrequency to which the RF material is exposed in the plasma processingchamber, for example.

In the plasma confinement rings, the RF lossy material can be exposed toplasma in a plasma processing chamber. In other embodiments, the RFlossy material can be protected from being exposed to plasma. Forexample, the RF lossy material can be a coating on one or more surfacesof the plasma confinement rings. In another embodiment, a portion of oneor more plasma confinement rings can be made of the RF lossy material.In a further embodiment, the RF lossy material can be embedded in one ormore plasma confinement rings (i.e., enclosed by another material thatis exposed to plasma) so that the RF lossy material is not exposed toplasma.

FIG. 1 depicts an embodiment of a plasma confinement ring assembly 10.Embodiments of the plasma confinement ring assembly 10 include at leasttwo plasma confinement rings. The plasma confinement ring assembly 10shown in FIG. 1 comprises, in a concentric arrangement, a mounting ring12 and four plasma confinement rings 14, 16, 18 and 20 suspended fromthe mounting ring 12. The mounting ring 12 and the plasma confinementrings 14, 16, 18 and 20 are preferably vertically movable to adjusttheir positions in a plasma processing chamber, e.g., to control thesize of the gaps between the plasma confinement rings. In FIG. 1, theplasma confinement rings 14, 16, 18 and 20 are shown in a stackedarrangement with radially-extending gaps between respective pairs ofrings 14, 16; 16, 18; and 18, 20. The gaps provide gas flow passages.

The mounting ring 12 and the plasma confinement rings 14, 16, 18 and 20are electrically floating parts of an electrically insulating(dielectric) material, such as quartz, fused silica, silicon nitride oralumina. High-purity quartz is a preferred material for these parts, andespecially for use in etch processes for dielectric materials. Quartz isRF transparent.

In the embodiment shown in FIG. 1, the mounting ring 12 and each of theplasma confinement rings 14, 16, 18 and 20 are of a single piece of theinsulating material.

As shown in FIG. 1, the plasma confinement rings 14, 16, 18 and 20 canbe connected to the mounting ring 12 by mounting elements, such aselements including one or more hangers 22, each extending through arespective hole 24 formed in each of the plasma confinement rings 14,16, 18 and 20. An insert 26 can be inserted in each hole 24 to preventdirect contact between the hanger 22 and the plasma confinement rings14, 16, 18 and 20. A spring 28 can be mounted on an inner shaft 30 ofthe hanger 22 to resiliently bias the hanger 22 with respect to afitting 32.

For etching round semiconductor substrates, the plasma confinement rings14, 16, 18 and 20 include an inner diametric surface 34, 36, 38 and 40,respectively, and an outer diametric surface 42, 44, 46 and 48,respectively. The inner diametric surfaces 34, 36, 38 and 40 areplasma-exposed surfaces. The plasma confinement rings 14, 16, 18 and 20have a suitable size for the substrate size to be processed, e.g., aninner diameter of about 17 inches for processing 300 mm wafers. As shownin FIG. 1, the inner diametric surfaces 34, 36, 38 and 40 of therespective plasma confinement rings 14, 16, 18 and 20 are preferablyvertically aligned with each other and with the mounting ring 12.

In the embodiment, an RF lossy material is applied as a coating on oneor more of, and preferably on each of, the inner diametric surfaces 34,36, 38 and 40 of the respective plasma confinement rings 14, 16, 18 and20. For example, the coating can be of doped silicon or SiC. The coatingcan be applied by any suitable deposition technique, such as sputterdeposition, chemical vapor deposition (CVD), thermal or electron-beamevaporation, or plasma spray deposition. The coating preferably coversthe entire inner diametric surface of the plasma confinement rings tomaximize the heated surface area. In other embodiments, the coating cancover less than the entire inner diametric surface of one or more of theplasma confinement rings.

The coating of the RF lossy material can have a suitable thicknessranging, for example, from about the skin depth to about three times theskin depth of the RF lossy material for the RF frequency that isincident on the RF lossy material in the plasma processing chamber.

During plasma processing of semiconductor substrates, the plasmaconfinement rings 14, 16, 18 and 20 are heated by the plasma, and arealso subject to other heat transfer mechanisms in the plasma processingchamber. The RF lossy material couples with RF energy and, consequently,is preferentially heated. As a result, the inner diametric surfaces 34,36, 38 and 40 of the respective plasma confinement rings 14, 16, 18 and20 can reach a sufficiently high temperature to substantially reduce,and preferably prevent, polymer deposition on these surfaces duringplasma processing.

In another embodiment, one or more of, and more preferably each of, theplasma confinement rings of the confinement ring assembly areconstructed to reduce heat conduction from the portion of theconfinement ring that includes the RF lossy material to the portion ofthe confinement ring adjacent to the RF lossy material to therebymaintain the RF lossy material at a sufficiently high temperature tosubstantially reduce, and to preferably prevent, polymer deposition onthe confinement ring. In the embodiment, one or more of, preferably eachof, the plasma confinement rings includes a thermal choke that canreduce heat conduction away from the RF lossy material to adjacentportions of the plasma confinement ring.

In the embodiment, at least one of the plasma confinement rings of theplasma confinement ring assembly 10 can have a multi-piece construction.For example, the embodiment of the plasma confinement ring 220 shown inFIG. 2 comprises an inner ring 221 supported on an outer ring 223. Theinner ring 221 and the outer ring 223 can be of a dielectric material,such as quartz or the like. The inner ring 221 includes a plasma-exposedinner diametric surface 240 on which a coating 241 of an RF lossymaterial is applied.

In another embodiment, the entire inner ring 221 is of the RF lossymaterial. For example, the inner ring 221 can be of doped silicon orSiC. The outer ring 223 can be of a suitable dielectric material, suchas quartz or the like.

In the plasma confinement ring 220, the inner ring 221 is supported onthe outer ring 223 to define at least one gap 225 between opposedsurfaces of the inner ring 221 and the outer ring 223. The gap 225 actsas a thermal choke, which is effective to reduce heat conduction fromthe inner ring 221 to the outer ring 223, especially when the innerdiametric surface 240 of the inner ring 221 is exposed to plasma. Byproviding the gap 225, the inner diametric surface 240 can be maintainedat a sufficiently high temperature to substantially reduce, and topreferably prevent, polymer deposition on the surface 240 during plasmaprocessing.

FIGS. 3A and 3B depict another embodiment of a plasma confinement ring320 including an inner diametric surface 340 and an embedded, i.e.,enclosed, RF lossy material 360. The embedded RF lossy material 360 canbe provided in one or more of, and preferably in each of, the plasmaconfinement rings of the confinement ring assembly.

As shown in FIG. 3A, the RF lossy material can have a circularconfiguration. In order to maximize heating of the inner diametricsurface 340 caused by heating of the RF lossy material 360 during plasmaprocessing, the radial distance between the RF lossy material 360 andthe inner diametric surface 340 can be minimized.

As shown in FIG. 3B, the plasma confinement ring 320 can have atwo-piece construction including an upper ring portion 362 and a lowerring portion 364 joined along an interface 370. The RF lossy material360 can be disposed in a depression 361 formed in the upper ring portion362 and/or the lower ring portion 364. The depression 361 can have anysuitable shape, such as semicircular, circular (as shown), a trenchconfiguration, or the like. The depression 361 can be formed by atechnique that is suitable for processing the material of the plasmaconfinement ring 320, such as laser ablation or etching. The RF lossymaterial 360 can extend continuously along the depression 361 to enhanceheating uniformity around the entire inner diametric surface 340.Alternatively, the RF lossy material 360 can extend discontinuously. TheRF lossy material 360 can be, for example, in the form of a solid beador a powder.

The upper ring portion 362 and the lower ring portion 364 of the plasmaconfinement ring 320 can be joined along the interface 370 by anysuitable joining technique. For example, the upper ring portion 362 andlower ring portion 364 can be bonded by a suitable adhesive, such as anelastomeric material compatible with chamber conditions typically facedby the plasma confinement rings during plasma processing ofsemiconductor substrates, such as described in commonly-owned U.S. Pat.No. 6,073,577, which is incorporated herein by reference in itsentirety. The elastomer material can optionally include a filler ofthermally conductive particles.

The elastomer can contain particles of a thermally conductive material,e.g., Si, SiC, metal or metal alloy to enhance the thermal conductivityof the elastomer. The metal is suitable for use in theimpurity-sensitive environment of a plasma processing chamber. Thethermally conductive elastomer can be applied at the interface 370between the RF lossy material 360 and the inner diametric surface 340 toenhance heat transfer to, and thereby minimize polymer deposition on,the inner diametric surface 340.

In another embodiment, the upper ring portion 362 and lower ring portion364 can be joined at the interface 370 by a welding technique. Forexample, the welding technique can be laser welding using a CO₂ laser,or the like. The upper ring portion 362 and lower ring portion 364 canbe laser welded at the interface 370 around the inner diametric surface340 and the outer diametric surface 348.

By embedding the RF lossy material 360 in the plasma confinement ring320, the RF lossy material 360 is protected from being exposed toplasma. Accordingly, the RF lossy material 360 can be a material, suchas a metal, metal alloy or magnetic material (e.g., ferrites) thatprovides RF coupling. The selected material can have a suitable thermalconductivity and volume to reach a sufficiently high temperature duringplasma processing to result in sufficient heating of the plasma exposedinner diametric surface 340 to substantially reduce, and to preferablyprevent, polymer deposition on the inner diametric surface 340.

FIGS. 4A-4C depict another embodiment of the plasma confinement ringassembly 400. The confinement ring assembly 400 comprises a mountingring 402 and a stack of plasma confinement rings 420, 430 and 440suspended from the mounting ring 402. The mounting ring 402 comprises aninner ring 410 supported on an outer ring 405. The inner ring 410includes a plasma-exposed inner surface 412, an outer surface 413opposite to the inner surface 412, and a coating 414 on the outersurface 413. The coating 414 is separated from the outer ring 405 by agap 416, which provides a thermal choke.

The plasma confinement rings 420, 430, 440 include respectiveplasma-exposed inner surfaces 422, 432, 442, and outer surfaces 428,438, 448. In the embodiment, the plasma confinement ring assembly 400can include more than the three plasma confinement rings 420, 430 and440, such as four or more rings, or it can include two rings.

In the embodiment, the inner ring 410 is preferably of an RF-transparentmaterial, such as quartz. The gap 416 can reduce conductive heattransfer from the inner ring 410 to the outer ring 405. Heat losses fromthe inner ring 410 to the outer ring 405 can be dominated by radiationlosses (dominated by T⁴ emissivity). In order to reduce such radiationlosses, the coating 414 on the outer surface 413 of the inner ring 410is of an electrically-conductive, low-emissivity material. For example,the coating 414 can be a suitable metal, such as nickel, indium tinoxide (ITO), fluorinated tin oxide (FTO), or the like. Applying thecoating 414 on the outer surface 413 results in the inner ring 410radiating less power to the outer ring 405, i.e., in a diminished heatloss, which can effectively keep the inner ring 410 hotter. Also,because the inner ring 410 is transparent to RF, RF can result incurrents in the coating 414, which results in power being dissipated inthe coating. As the coating 414 is bonded to the inner ring 410, thecoating 414 can supplement the heating power of the inner ring 410.

The inner ring 410 can have any suitable dimensions. For example, thethickness of the inner ring 410 can range from about 0.05 in. to about0.30 in, preferably from about 0.10 in. to about 0.20 in.

In the embodiment, the outer ring 405 comprises a plurality ofcircumferentially-spaced depressions 417 formed at the inner peripheryof the outer ring 405. FIGS. 4B and 4C show a portion of the outer ring405 including a depression 417 and a support element 415 removablyreceived in the depression 417 (FIG. 4C). As shown in FIG. 4A, the innerring 410 is supported on the support element 415. The support elements415 can be round balls, for example, or they can have other suitableshapes. Such round balls provide reduced contact area between thesupport elements 415 and the inner ring 410, which can reduce thermalconduction from the inner ring 410 to the outer ring 405. The supportelements 415 can be of TEFLON (polytetrafluoroethylene), PEEK(polyetheretherketone), or the like.

As shown in FIG. 4A, the plasma confinement rings 420 and 430 caninclude thermal chokes 424, 426 and 434, 436, respectively. Theconfinement ring 440 can also include one or more thermal chokes. Thethermal chokes 424, 426 and 434, 436 can be slots formed in therespective plasma confinement rings 420, 430. The thermal chokes canreduce heat transfer from the plasma-exposed inner surfaces 422, 432,respectively, when these surfaces are exposed to plasma during plasmaprocessing operations. Consequently, the inner surfaces 422, 432 canreach a sufficiently high temperature to substantially reduce, and topreferably prevent, polymer deposition on the inner surfaces 422, 432during plasma processing. Suitable thermal chokes that can be used forthe plasma confinement rings 420, 430 and 440 of the plasma confinementring assembly 400 are described in commonly-owned U.S. patentapplication Ser. No. 11/083,241, which is incorporated herein byreference in its entirety.

Plasma confinement rings of other embodiments of the plasma confinementring assembly can also include thermal chokes. For example, one or moreof the plasma confinement rings 14, 16, 18 and 20 of the plasmaconfinement ring assembly 10 shown in FIG. 1 can include one or moreslots to further enhance heating of respective inner surfaces 34, 36, 38and 40 during plasma processing.

The RF lossy material can substantially reduce, and preferably prevent,polymer deposition on the surface of the plasma confinement ring atwhich the RF lossy material is disposed (in embodiments in which the RFlossy material is exposed to plasma), or on surfaces adjacent to the RFlossy material (in embodiments in which the RF lossy material is notexposed to plasma). However, should a small amount of polymer deposit onany one of the plasma confinement rings during plasma processingoperations, such polymer deposit can be removed from the plasmaconfinement ring(s) using an oxygen plasma treatment performed betweenthe processing of successive wafers. The temperatures reached by theplasma confinement rings are preferably sufficiently high that polymerdeposited on one or more of the plasma confinement rings can besubstantially removed by the oxygen plasma. The chamber pressure duringthe oxygen plasma treatment can be about 500 mTorr to about 700 mTorr,for example.

In another embodiment, one or more plasma confinement rings of theconfinement ring assembly can include an outer surface having surfaceroughness characteristics that enhance adhesion of polymer on the plasmaconfinement rings. In the embodiment, polymer that may deposit on theroughened surface during plasma processing of semiconductor substratesadheres to the surface such that the polymer does not flake off ontowafer surfaces or the semiconductor substrates. For example, in themulti-piece plasma confinement ring 220 shown in FIG. 2, the upperand/or lower surface of the outer ring portion 223 can be roughened(e.g., by shot blasting) to promote polymer adhesion on the surface(s).

FIG. 5 depicts an exemplary embodiment of a capacitively-coupled plasmaprocessing chamber 500 in which the plasma confinement ring assembly 10is installed. The plasma processing chamber 500 includes an upperelectrode 502 having a bottom surface 504. In the embodiment, the bottomsurface 504 includes a step 506 adapted to control a localized densityof the plasma formed adjacent the exposed surface of the upper electrode502, as described in U.S. Pat. No. 6,391,787, which is incorporatedherein by reference in its entirety. In the embodiment, the upperelectrode 502 is a showerhead electrode including gas passages 508arranged for distributing process gas into the plasma processing chamber500. The upper electrode 502 can be of silicon (e.g., single crystalsilicon or polycrystalline silicon) or silicon carbide.

In the embodiment, the upper electrode 502 is a single-piece electrode(e.g., for 200 mm wafer processing). The upper electrode 502 can bemounted (e.g., elastomer bonded) to a backing member 510 of a suitablematerial, such as graphite or silicon carbide. The backing member 510includes gas passages 512 in flow communication with corresponding gaspassages 508 in the upper electrode 502.

In another embodiment, the upper electrode 502 can have a two-piececonstruction (e.g., for 300 mm wafer processing) and include asingle-piece inner electrode member and an outer electrode membersurrounding the inner electrode member, such as described incommonly-owned U.S. patent application Ser. No. 10/743,062, which isincorporated herein by reference in its entirety. In the embodiment, thebacking member 510 can include a backing plate co-extensive with theinner electrode member and a backing ring co-extensive with the outerelectrode member, as described in U.S. patent application Ser. No.10/743,062.

In the embodiment of the plasma processing chamber 500 shown in FIG. 5,a thermal control plate 514 is supported on the backing member 510. Thethermal control plate 514 can include one or more heaters operable tocontrol the temperature of the upper electrode 502, as described in U.S.patent application Ser. No. 10/743,062.

The plasma processing chamber 500 includes a gas source (not shown) forsupplying process gas to the upper electrode 502. The process gas isdistributed in the chamber by the gas passages 508 in the upperelectrode 502. The upper electrode 502 can be powered by an RF powersource 516 via a matching network. In another embodiment, the upperelectrode 502 can be electrically grounded to provide a return path forpower supplied by a bottom electrode of the substrate support 520 of theplasma processing chamber 500.

In the embodiment, process gas is supplied into the plasma processingchamber 500 at the plasma generation region in the space between theupper electrode 502 and a semiconductor substrate 522, e.g., asemiconductor wafer, supported on a substrate support 520. The substratesupport 520 can include an electrostatic chuck 524 that secures thesemiconductor substrate 522 on the substrate support by an electrostaticclamping force. The electrostatic chuck 524 acts as a bottom electrodeand can be biased by at least one of the RF power sources 525, 527(typically via a matching network).

During plasma processing of the semiconductor substrate 522, the plasmaconfinement ring assembly 10 confines the plasma in a plasma confinementzone between the upper electrode 502 and the semiconductor substrate522. Edge rings 526, 528 can be arranged to surround the semiconductorsubstrate 522 to focus the plasma so as to improve etch uniformity.

A vacuum pump (not shown) is adapted to maintain a desired vacuumpressure inside the plasma processing chamber 500.

An exemplary parallel-plate plasma reactor that can be used is adual-frequency plasma etch reactor (see, e.g., commonly-owned U.S. Pat.No. 6,090,304, which is hereby incorporated by reference in itsentirety). In such reactors, etching gas can be supplied to a showerheadelectrode from a gas supply and plasma can be generated in the reactorby supplying RF energy at different frequencies from at least two RFsources to the showerhead electrode and/or a bottom electrode, or theshowerhead electrode can be electrically grounded and RF energy at twoor more different frequencies can be supplied to the bottom electrode.

The foregoing has described the principles, preferred embodiments andmodes of operation of the present invention. However, the inventionshould not be construed as being limited to the particular embodimentsdiscussed. Thus, the above-described embodiments should be regarded asillustrative rather than restrictive, and it should be appreciated thatvariations may be made in those embodiments by workers skilled in theart without departing from the scope of the present invention as definedby the following claims.

1. A plasma confinement ring for a plasma confinement ring assemblycomprising a stack of plasma confinement rings with gaps therebetweenfor a plasma processing chamber, the plasma confinement ring comprising:at least one hole having an insert therein adapted to cooperate with ahanger which supports the plasma confinement ring in the stack of rings;a surface; an RF transparent material; and an RF lossy material; whereinthe RF lossy material is adapted to couple RF energy such that thesurface reaches a sufficiently high temperature to substantially reducepolymer deposition on the surface when the surface is exposed to plasmain the plasma processing chamber; and wherein the RF lossy material isdoped silicon.
 2. The plasma confinement ring of claim 1, wherein the RFlossy material is a coating on an inner diametric surface of the plasmaconfinement ring.
 3. The plasma confinement ring of claim 1, wherein theplasma confinement ring comprises: an inner ring comprising the RF lossymaterial; an outer ring; and at least one gap between the inner ring andouter ring, the gap being effective to reduce heat conduction from theinner ring to the outer ring.
 4. The plasma confinement ring of claim 3,wherein the inner ring consists essentially of the RF lossy material. 5.A plasma confinement ring assembly for a plasma processing chamber,comprising: at least two plasma confinement rings arranged in a stack,each of the plasma confinement rings comprising a plasma-exposedsurface, an RF transparent material, and means for coupling RF energy;wherein the means for coupling RF energy is an RF lossy material adaptedto raise the plasma-exposed surface of each plasma confinement ring to asufficiently high temperature to substantially reduce polymer depositionon the plasma-exposed surface when the plasma confinement rings areexposed to plasma in the plasma processing chamber; wherein the RF lossymaterial is doped silicon.
 6. The plasma confinement ring assembly ofclaim 5, comprising: a mounting ring; and mounting elements suspendingthe plasma confinement rings from the mounting ring.
 7. The plasmaconfinement ring assembly of claim 5, wherein at least one of the plasmaconfinement rings comprises: an inner ring comprising the plasma-exposedsurface and the RF lossy material; and an outer ring adapted to supportthe inner ring such that a gap is defined between the inner ring andouter ring, the gap being effective to reduce heat conduction from theinner ring to the outer ring.
 8. A plasma processing chamber,comprising: an upper showerhead electrode; a substrate supportcomprising a lower electrode; and a plasma confinement ring assemblyaccording to claim 5 arranged to confine plasma in a space between theshowerhead electrode and the substrate support.
 9. A plasma confinementring assembly for a plasma processing chamber, comprising: at least twoplasma confinement rings arranged in a stack, each of the plasmaconfinement rings comprising an RF transparent material and aplasma-exposed surface of an RF lossy material; wherein the RF lossymaterial is adapted to couple RF energy such that the plasma-exposedsurface of each plasma confinement ring reaches a sufficiently hightemperature to substantially reduce polymer deposition on theplasma-exposed surface when the plasma confinement rings are exposed toplasma in the plasma processing chamber; wherein the RF lossy materialis doped silicon.
 10. The plasma confinement ring assembly of claim 9,wherein the RF lossy material is a coating on an inner diametric surfaceof the plasma confinement rings.
 11. The plasma confinement ringassembly of claim 9, comprising: a mounting ring; and mounting elementssuspending the plasma confinement rings from the mounting ring.
 12. Theplasma confinement ring assembly of claim 9, wherein at least one of theplasma confinement rings comprises: an inner ring comprising the RFlossy material; an outer ring; and at least one gap between the innerring and outer ring, the gap being effective to reduce heat conductionfrom the inner ring to the outer ring.
 13. The plasma confinement ringassembly of claim 12, wherein the inner ring consists essentially of theRF lossy material.
 14. A plasma processing chamber, comprising; an uppershowerhead electrode; a substrate support comprising a lower electrode;and a plasma confinement ring assembly according to claim 9 arranged toconfine plasma in a space between the showerhead electrode and thesubstrate support.
 15. The plasma confinement ring assembly of claim 5,wherein the RF lossy material is a coating on an inner diametric surfaceof each of the plasma confinement rings.